The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Feb. 01, 2016
Basf SE, Ludwigshafen, DE;
National University of Singapore, Singapore, SG;
Mi Zhou, Seobu-ro, KR;
Peter K.-H. Ho, Singapore, SG;
Lay-Lay Chua, Singapore, SG;
Png Rui-Qi, Singapore, SG;
Wei-Ling Seah, Singapore, SG;
BASF SE, Ludwigshafen, DE;
National University of Singapore, Singapore, SG;
Abstract
This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.