Hwaseong-si, South Korea

Pil-sang Yoon

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.9

ph-index = 3

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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12 patents (USPTO):Explore Patents

Title: Pil-sang Yoon: Innovator in Memory Technology

Introduction

Pil-sang Yoon is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory technology, holding a total of 12 patents. His work focuses on enhancing the efficiency and reliability of memory systems.

Latest Patents

Among his latest patents is a "Cross-point memory device and method for converting and storing write data and associated parity to achieve uniform bit error rates." This innovative method involves operating a resistive memory system with multiple layers. It includes receiving a write request and first data, converting the first address into a second address, and assigning sub-region data to the layers for improved data writing.

Another notable patent is the "Memory controller, method of operating the same and storage device including the memory controller." This patent outlines a method for setting a read voltage by a memory controller. It details how the memory device reads data from memory cells by applying a test read voltage and renewing this voltage based on cell count information to optimize performance.

Career Highlights

Pil-sang Yoon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern computing.

Collaborations

He has collaborated with notable colleagues, including Jun-Jin Kong and Hong-Rak Son, contributing to various innovative projects within the company.

Conclusion

Pil-sang Yoon's contributions to memory technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements are paving the way for more efficient and reliable memory systems in the future.

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