The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Mar. 12, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kwang-hoon Kim, Uiwang-si, KR;

Jun-jin Kong, Yongin-si, KR;

Hong-rak Son, Anyang-si, KR;

Pil-sang Yoon, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 16/26 (2006.01); G11C 29/50 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 7/06 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); G11C 29/028 (2013.01); G11C 2029/0405 (2013.01);
Abstract

A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.


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