Ghent, Belgium

Pierre Stefaan Bruneel

This inventor holds 1 USPTO granted patent. Top assignee: Ami Semiconductor Belgium. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pierre Stefaan Bruneel. Retrieved from https://idiyas.com/inventor/pierre-stefaan-bruneel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Pierre Stefaan Bruneel: Innovator in Interconnect Structures

Introduction

Pierre Stefaan Bruneel is a notable inventor based in Ghent, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the development of interconnect structures. His innovative approach has led to the filing of a patent that showcases his expertise and creativity.

Latest Patents

Pierre holds a patent for a "Method for making interconnect structures." This invention reflects his commitment to advancing technology in the semiconductor industry. The patent demonstrates his ability to address complex challenges in the field.

Career Highlights

Pierre is currently employed at Ami Semiconductor Belgium, where he continues to work on cutting-edge technologies. His role at the company allows him to collaborate with other talented professionals and contribute to the development of innovative solutions in semiconductor manufacturing.

Collaborations

Some of Pierre's coworkers include Eddy De Backer and Malik Mastgutovich Fatkhoutdinov. Their collaboration fosters a creative environment that encourages the exchange of ideas and expertise.

Conclusion

Pierre Stefaan Bruneel is a dedicated inventor whose work in interconnect structures has made a significant impact in the semiconductor industry. His contributions, along with his collaborations, highlight the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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