Puteaux, France

Pierre Meunier


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Pierre Meunier: Innovator in MOS Technology

Introduction

Pierre Meunier is a notable inventor based in Puteaux, France. He has made significant contributions to the field of integrated circuits, particularly through his innovative work in MOS technology. His expertise and creativity have led to the development of a unique amplifying integrated circuit.

Latest Patents

Pierre Meunier holds a patent for an "Amplifying integrated circuit in the MOS technology." This invention features a negative-feedback band-pass amplifier constructed with two MOS transistors. The design includes an input stage of the summing amplifier type, where the sources of the transistors are connected to each other and to ground. The gate of one transistor serves as the amplifier input, while the other is connected to the amplifier output through a negative feedback resistance. The amplifying chain consists of n identical stages in series, each functioning as an inverting amplifier.

Career Highlights

Pierre Meunier is associated with the Commissariat à l'Énergie Atomique, where he has contributed to various projects and advancements in technology. His work has been instrumental in enhancing the performance and efficiency of integrated circuits.

Collaborations

Throughout his career, Pierre has collaborated with esteemed colleagues such as Bernard Baylac and Gerard Merckel. These partnerships have fostered innovation and have been crucial in the development of his patented technologies.

Conclusion

Pierre Meunier's contributions to MOS technology exemplify the spirit of innovation in the field of integrated circuits. His patent and collaborative efforts highlight the importance of teamwork in advancing technological frontiers.

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