Loney, Switzerland

Pierre Fazan

This inventor holds 1 USPTO granted patent. Top assignee: Imec Vzw. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pierre Fazan. Retrieved from https://idiyas.com/inventor/pierre-fazan-h99xcd9v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Inventor Pierre Fazan: Innovations in Semiconductor Technology

Introduction: Pierre Fazan, a distinguished inventor based in Loney, Switzerland, is known for his groundbreaking contributions in the field of semiconductor technology. With a keen focus on enhancing device performance and efficiency, Fazan has secured a patent that exemplifies his innovative spirit and technical expertise.

Latest Patents: Fazan holds a patent for a "Method for manufacturing a dual work function semiconductor device." This method involves several intricate steps, including the provision of a substrate with designated areas for different transistor types. He outlines the formation of a dielectric layer, the application of metal layers with work function-shifting elements, and the crucial annealing process to ensure the effective diffusion of these elements. This innovation holds potential implications for the development and optimization of advanced semiconductor devices in the industry.

Career Highlights: Pierre Fazan's career is marked by his tenure at Imec, a leading research and innovation hub in nanoelectronics. His work there has been pivotal in pushing the boundaries of semiconductor device fabrication. Fazan's expertise in materials science and engineering allows him to contribute significantly to the ongoing advancements in the technology sector.

Collaborations: Throughout his career, Fazan has had the opportunity to collaborate with skilled professionals such as Tom Schram and Christian Caillat. These collaborations have further enriched his research endeavors and have fostered an environment of innovation at Imec.

Conclusion: In summary, Pierre Fazan's patent for the dual work function semiconductor device reflects his commitment to innovation and excellence in semiconductor technology. His work continues to inspire future advancements in the field, showcasing the vital role of inventors in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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