Company Filing History:
Years Active: 1980
Title: Pierre E Schmidt: Innovator in MOS-FET Technology
Introduction
Pierre E Schmidt is a notable inventor based in Estado Miranda, Venezuela. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS-FET devices. His innovative work has led to advancements that enhance the performance of high-frequency applications.
Latest Patents
One of Schmidt's key patents is titled "Built-in notched channel MOS-FET triodes for high frequency application." This novel device features a built-in notched channel MOS-FET with an effective channel length that is smaller than that of conventional built-in channel MOS-FET devices. The design includes an insulating substrate and a semiconductor layer with two n.sup.+ -type regions separated by an n-type region. Insulation covers the semiconductor region, with openings in each n.sup.+ -type region for metal contacts. A distinctive notch in the n-type region touches the boundary between one n.sup.+ -type region and the n-type region, with a metal contact positioned above the notch. All metal contacts function as electrodes, showcasing the innovative design of this device.
Career Highlights
Pierre E Schmidt is affiliated with the Instituto Venezolano de Investigaciones Científicas (IVIC), where he continues to contribute to research and development in semiconductor technology. His work has been instrumental in advancing the capabilities of MOS-FET devices, making them more efficient for high-frequency applications.
Collaborations
Schmidt has collaborated with various professionals in his field, including Mukunda B Das, to further enhance the research and development of semiconductor technologies.
Conclusion
Pierre E Schmidt's contributions to the field of MOS-FET technology demonstrate his innovative spirit and commitment to advancing semiconductor applications. His patent on built-in notched channel MOS-FET triodes is a testament to his expertise and dedication to improving high-frequency device performance.