The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 1980
Filed:
Nov. 21, 1978
Pierre E Schmidt, Estado Miranda, VE;
Mukunda B Das, State College, PA (US);
Instituto Venezolano de Investigaciones Cientificas (IVIC), Estado Miranda, VE;
Abstract
A novel built-in notched channel MOS-FET device with an effective channel length smaller than the effective channel length of conventional built-in channel MOS-FET devices. The device comprises an insulating substrate, a semiconductor layer with two n.sup.+ -type regions separated by an n-type region, insulation over the semiconductor region, with an opening in each n.sup.+ -type semiconductor region for metal contacts, a notch in the n-type semiconductor region, at least half of the notch being in the n-type region and touching the boundary between one n.sup.+ -type semiconductor region and the n-type semiconductor region, and a metal contact above the notch, all of the metal contacts functioning as electrodes.