Philip Michael Pitner

Title: The Innovations of Philip Michael Pitner

Introduction

Philip Michael Pitner is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on the production of strained and defect-free semiconductor layers, which are crucial for advancing electronic devices.

Latest Patents

Pitner's latest patents include a process and method for producing strained and defect-free semiconductor layers. In one embodiment, he utilizes silicon on insulator (SOI) as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, allowing the SiGe layer to relax without generating threading dislocations. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially, the strain in the SiGe layer becomes equalized with the thin silicon layer by creating tensile strain. The strain in the thin silicon layer is then relaxed through plastic deformation during an anneal, preventing threading dislocations from being introduced into the upper SiGe material. This innovative approach enables the formation of a strained silicon layer for heterostructures on the SiGe material.

Career Highlights

Philip Michael Pitner is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing methods that enhance the performance and reliability of semiconductor devices.

Collaborations

Throughout his career, Pitner has collaborated with esteemed colleagues such as Bruce A. Ek and Subramanian Srikanteswara Iyer. These collaborations have further enriched his research and innovations in the semiconductor field.

Conclusion

Philip Michael Pitner's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods for producing strained and defect-free semiconductor layers are paving the way for advancements in electronic devices.