This inventor holds 1 USPTO granted patent. Top assignee: Stc, Inc. Active years: 1990.
Company Filing History:
Years Active: 1990
Title: The Innovations of Philip B Moynagh
Introduction
Philip B Moynagh is a notable inventor based in Buckhurst Hill, GB. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on processes that enhance the efficiency and effectiveness of semiconductor devices.
Latest Patents
Moynagh holds a patent for a process titled "Process for forming isolation trenches in silicon semiconductor bodies." This innovative method involves forming isolation trenches in a silicon substrate by selectively doping the substrate and preferentially oxidizing the doped material. The typical dopants used in this process are arsenic or phosphorus, with the substrate being doped to a level of at least 5×1019 cm-3.
Career Highlights
Philip B Moynagh is associated with Stc, Inc., where he applies his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing and design of semiconductor devices.
Collaborations
Moynagh has collaborated with notable colleagues, including Sureshchandra Mishrilal Ojha and Paul J Rosser. Their combined efforts have furthered research and development in the semiconductor field.
Conclusion
Philip B Moynagh's innovative work in semiconductor technology, particularly his patented process for forming isolation trenches, showcases his significant contributions to the industry. His collaborations and career at Stc, Inc. highlight his role in advancing semiconductor technology.