Nijmegen, Netherlands

Petrus M Moors

This inventor holds 3 USPTO granted patents. Top assignee: U.S. Philips Corporation. Active years: 1986-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Petrus M Moors. Retrieved from https://idiyas.com/inventor/petrus-m-moors

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Nijmegen, NL (1986 - 1988)
  • Eindhoven, NL (2000)

Company Filing History:


Years Active: 1986-2000

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3 patents (USPTO):Explore Patents

Title: Innovations of Petrus M Moors

Introduction

Petrus M Moors is a notable inventor based in Nijmegen, Netherlands. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance of bipolar transistors, which are crucial components in various electronic devices.

Latest Patents

One of his latest patents involves a semiconductor device featuring a high-frequency bipolar transistor. This invention includes a bipolar transistor with a first main surface in contact with a conductive mounting surface, and an opposed second main surface equipped with connection pads for the emitter, base, and collector. The design ensures that the lateral dimensions of the conductive mounting surface are nearly equal to those of the first main surface, allowing for a compact structure. The high-frequency properties of the transistor are significantly influenced by the size of the conductive mounting surface, which forms a parasitic capacitance with a conductive ground surface. This capacitance is particularly important for high-frequency applications. Additionally, the bonding wires for the connection pads are shorter than in previous designs, resulting in lower self-inductance and resistance, which enhances the high-frequency performance and power supply capabilities.

Another patent details a method for manufacturing a bipolar transistor with emitter ballast resistors. This method involves creating a base window and a strip-shaped opening on a collector region, followed by doping the base after covering the strip-shaped opening with a masking layer. After the masking layer is removed, oxide layers of uniform thickness are formed in both the base window and the strip-shaped opening. The process continues with the formation of emitter fingers and base contact windows, leading to the creation of base contact zones and separated emitter ballast resistors.

Career Highlights

Petrus M Moors is associated with U.S. Philips Corporation, where he has contributed to various innovative projects. His expertise in semiconductor devices has positioned him as a key figure in advancing technology in this field.

Collaborations

Throughout his career, Petrus has collaborated with notable colleagues, including Atef Akhnoukh and Teunis Hemanus Uittenbogaard. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies.

Conclusion

Petrus M Moors is a distinguished inventor whose work in semiconductor technology has led to significant advancements in bipolar transistors. His innovative patents and collaborations reflect his commitment

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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