Petra Alén

Title: Petra Alén: Innovator in Metal Thin Film Technology

Introduction

Petra Alén is a prominent inventor based in Helsinki, Finland. She has made significant contributions to the field of materials science, particularly in the production of metal thin films. Her innovative approach has led to advancements in atomic layer deposition (ALD) technology.

Latest Patents

Petra Alén holds a patent for a process for producing metal thin films by ALD. This invention allows for the deposition of electrically conductive noble metal thin films on a substrate. The process involves pulsing a vaporized precursor of a noble metal into a reaction chamber, where it interacts with the substrate surface. This method ensures that only a molecular layer of the metal precursor is formed. Subsequently, a pulse of molecular oxygen-containing gas is introduced, facilitating a reaction that results in high-quality metal thin films. This technology is particularly beneficial for structures with high aspect ratio vias and trenches, as well as other surface features that require precise deposition.

Career Highlights

Petra Alén is currently employed at ASM International N.V., a company known for its expertise in semiconductor manufacturing equipment. Her work has been instrumental in advancing the capabilities of ALD technology, making it a vital process in the production of electronic components.

Collaborations

Throughout her career, Petra has collaborated with notable colleagues, including Titta Aaltonen and Mikko Ritala. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Petra Alén's contributions to the field of metal thin film technology exemplify her dedication to innovation. Her patented process for producing high-quality metal thin films has the potential to impact various applications in the semiconductor industry.