Munich, Germany

Peter Schrögmeier

This inventor holds 7 USPTO granted patents. Top assignees: Infineon Technologies Ag, Qimonda Ag. Active years: 2005-2010.


% Patents Active = 14.3

Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 24(Granted Patents)


Location History:

  • München, DE (2005 - 2008)
  • Munich, DE (2010)

Company Filing History:


Years Active: 2005-2010

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7 patents (USPTO):Explore Patents

Title: Peter Schrögmeier: Innovator in Integrated Circuit Technology

Introduction

Peter Schrögmeier is a notable inventor based in Munich, Germany. He has made significant contributions to the field of integrated circuits, holding a total of 7 patents. His work focuses on methods and technologies that enhance the functionality and efficiency of memory cells.

Latest Patents

One of his latest patents is titled "Method and integrated circuit for determining the state of a resistivity changing memory cell." This invention involves a method that detects the resistance of a memory cell and determines its state based on specific resistance values. Another significant patent is "Method and circuit arrangement for resetting an integrated circuit." This invention provides a method for resetting parts of an integrated circuit, particularly synchronous semiconductor memories, using clock signals to convey reset information.

Career Highlights

Throughout his career, Peter Schrögmeier has worked with prominent companies in the technology sector, including Infineon Technologies AG and Qimonda AG. His experience in these organizations has allowed him to develop innovative solutions in integrated circuit technology.

Collaborations

Peter has collaborated with notable professionals in his field, including Stefan Dietrich and Christian Weis. These partnerships have contributed to the advancement of his inventions and the development of new technologies.

Conclusion

Peter Schrögmeier's contributions to integrated circuit technology and his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of memory cell technologies.

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