Peter P Meng

Title: Innovations of Peter P Meng

Introduction

Peter P Meng is a notable inventor based in Sunnyvale, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving methods and structures that enhance the performance of electronic devices.

Latest Patents

One of his latest patents is titled "Method for simulating the surface contours of a layer material to be." This invention describes an improved method for simulating the surface contours of a layer of material formed over a base structure using a string algorithm. The method includes defining old surface points along the base structure, a set of possible new surface points, and an orderly array of points that define the surface contours of the simulated layer.

Another significant patent is "Dmost junction breakdown enhancement." This invention addresses body to drain junction breakdown in DMOST devices, which can be controlled to lower electric field gradients near the PN junction. The structure enhances breakdown behavior specifically for vertical DMOST devices. By tailoring the N type doping profile, the avalanche breakdown voltage can be increased by up to 40% compared to conventional PN junction diodes.

Career Highlights

Peter P Meng is currently employed at National Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has had a profound impact on the development of more efficient electronic components.

Collaborations

Throughout his career, Peter has collaborated with notable colleagues such as George P Walker and Sheldon Aronowitz. These collaborations have contributed to the advancement of technology in their field.

Conclusion

Peter P Meng's contributions to semiconductor technology through his patents and work at National Semiconductor Corporation highlight his role as an influential inventor. His innovative methods and structures continue to shape the future of electronic devices.