Peter N Manos, Ii

Title: The Innovations of Peter N. Manos, II

Introduction

Peter N. Manos, II is an accomplished inventor based in Austin, TX. He is known for his significant contributions to the field of semiconductor technology. With a focus on improving the functionality of floating gate transistors, his work addresses critical challenges in the industry.

Latest Patents

One of his notable patents is for a moisture barrier for floating gate transistors. This invention involves a floating gate device that includes a control gate and a floating gate. The floating gate is designed to hold a charge to establish a logic state. Moisture can adversely affect the floating gate, leading to loss of charge or incorrect charging. To combat this issue, Manos developed a thin nitride layer that acts as a moisture barrier. This layer is thin enough to allow minimal attenuation of ultraviolet light, which is essential for neutralizing the charge state of the floating gate. Importantly, this nitride layer is not used as a passivation layer, allowing for the use of desirable phosphosilicate glass (PSG) for passivation.

Career Highlights

Peter N. Manos, II is currently employed at Motorola Corporation, where he continues to innovate in the field of semiconductor devices. His work has had a lasting impact on the development of reliable and efficient electronic components.

Collaborations

Throughout his career, Manos has collaborated with various professionals in the industry, including his coworker Roger S. Countryman, Jr. These collaborations have contributed to the advancement of technology in their field.

Conclusion

Peter N. Manos, II is a notable inventor whose work on moisture barriers for floating gate transistors has made significant strides in semiconductor technology. His contributions continue to influence the industry and enhance the reliability of electronic devices.