Peter Lin

Title: Innovations of Peter Lin

Introduction

Peter Lin is a notable inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. With a total of 2 patents, Lin's work has garnered attention in the industry.

Latest Patents

One of Lin's latest patents is for a Power MOSFET with a metal-filled deep source contact. This innovative design features a planar gate power MOSFET that includes a substrate with a semiconductor surface doped with a first conductivity type. The invention comprises a plurality of transistor cells, including a first cell and at least a second cell, each having a gate stack over a body region. A trench with an aspect ratio greater than 3 extends down from the top side of the semiconductor surface between the gate stacks, providing a source contact from a source doped with a second conductivity type to the substrate. Additionally, a field plate is positioned over the gate stacks, providing a liner for the trench, which contains a refractory metal or platinum-group metal filler. A drain doped with the second conductivity type is located in the semiconductor surface on the side of the gate stacks opposite the trench.

Career Highlights

Peter Lin is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of power MOSFETs, which are critical components in various electronic devices.

Collaborations

Lin has collaborated with several talented individuals in his field, including Furen Lin and Frank Alexander Baiocchi. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Peter Lin's contributions to semiconductor technology, particularly through his innovative patents, highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced electronic components.