San Jose, CA, United States of America

Peter K Loewengardt

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter K Loewengardt. Retrieved from https://idiyas.com/inventor/peter-k-loewengardt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of Peter K Loewengardt

Introduction

Peter K Loewengardt is a notable inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor processing. His innovative approach has led to the development of a unique method that addresses critical challenges in the industry.

Latest Patents

Peter holds a patent for a "Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system." This patent outlines a method of eliminating charging that results from plasma processing a semiconductor wafer. The process involves exposing the semiconductor wafer to particles that remove charge and reduce topographically dependent charging during plasma processing.

Career Highlights

Peter is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on enhancing semiconductor manufacturing processes, which are crucial for the advancement of technology.

Collaborations

Peter has collaborated with notable colleagues, including John M Yamartino and Kenlin Huang. These partnerships have contributed to the success of his innovative projects and patents.

Conclusion

Peter K Loewengardt's contributions to semiconductor processing through his patented methods demonstrate his expertise and commitment to innovation. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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