Peter G Lecomber

Title: The Innovations of Peter G Lecomber

Introduction

Peter G Lecomber is a notable inventor based in Dundee, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. With a total of 2 patents to his name, Lecomber's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is focused on amorphous silicon memory. This non-volatile amorphous semiconductor memory device utilizes a forming process. It comprises superimposed layers of p- and n-doped semiconducting material, such as silicon. The device is characterized by the fact that both the p- and n-doped layers are made of amorphous semiconducting material. Notably, one of these layers is much more heavily doped than the other. The less heavily doped layer has a thickness not exceeding 2 micrometers, while the dopant concentration in the more heavily doped layer is significantly higher. Additionally, a quasi-intrinsic layer or substantially undoped amorphous semiconducting material may be applied to enhance the device's functionality. This innovative design allows the device to function as an electrically-programmable non-volatile semiconductor memory device.

Career Highlights

Throughout his career, Peter G Lecomber has worked with prominent companies, including British Telecommunications Public Limited Company and The British Petroleum Company, P.L.C. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Lecomber has collaborated with notable individuals in his field, including Alan E Owen and Anthony J Snell. These partnerships have likely fostered a creative environment that has led to advancements in his work.

Conclusion

Peter G Lecomber's contributions to semiconductor technology, particularly in non-volatile memory devices, showcase his innovative spirit and dedication to advancing the field. His patents and collaborations reflect a commitment to excellence in engineering and invention.