Peter C Wade

Title: Innovations by Peter C Wade

Introduction

Peter C Wade is a notable inventor based in Hyde Park, NY (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to engineering challenges.

Latest Patents

One of his latest patents is for a Reactive Ion Etching chamber design for flip chip interconnections. This invention includes arrangements of gas outlets that force gas-flow-shadow elimination. It provides means to control and adjust the direction of gases to modify and control the direction of plasma flow at the wafer surface during processing. Additionally, it features mechanisms to either move the exhaust paths for exhaust gases or to open and close exhaust paths sequentially, in a controlled manner, to modify flow directions of ions in the etching plasma. A combination of rotation and oscillation of a magnetic field imposed on the RIE chamber can be employed by rotating permanent magnetic dipoles around the periphery of the RIE chamber or by controlling current through a coil wrapped around the periphery of the RIE process chamber to enhance the removal of residues attributable to gas-flow-shadows formed by linear ion paths in the plasma.

Another significant patent is for an integrated method for etching BLM titanium-tungsten alloys for CMOS devices with copper metallization. This process begins with forming at least one dielectric layer over a doped semiconductor substrate. It involves creating a hole through the dielectric layer down to the semiconductor substrate, followed by forming a metal conductor in the hole. Intermediate layers are then formed over the metal conductor and the dielectric layer, leading to the creation of a tapered opening down to the surface of the metal conductor. The process continues with the formation of BLM layers, including a titanium-tungsten (TiW) layer over the metal conductor and dielectric layer. A mask is placed over the top surface of the BLM layers, and a C4 solder bump is plated on the BLM layers in the patterning hole. The mask is then removed, and the BLM layers are wet etched away aside from the solder bump, leaving a residual TiW layer over the dielectric layer. A dry etching process is performed to remove the residual TiW layer aside from the solder bump, concluding when the endpoint is reached. Finally, the solder bump is heated in a reflow process to form a C4 solder ball.

Career Highlights

Peter C Wade is currently