Suzhou, China

Pengcheng Yang

This inventor holds 1 USPTO granted patent. Top assignee: Suzhou Haider New Material Technology Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pengcheng Yang. Retrieved from https://idiyas.com/inventor/pengcheng-yang-v3l5vnl1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Pengcheng Yang - Innovator in Shock Insulation Technology

Introduction

Pengcheng Yang is a notable inventor based in Suzhou, China. He has made significant contributions to the field of shock insulation technology. His innovative approach has led to the development of a unique core material designed to enhance shock insulation performance.

Latest Patents

Yang holds a patent for a core material for shock insulation support, which includes a preparation method for the shock insulation support. The core material comprises steel shot, zirconia particles, and rubber particles in specific weight proportions. This invention is designed to dissipate earthquake energy through a dry friction energy dissipation mechanism, providing high damping and excellent shock insulation performance.

Career Highlights

Yang is associated with Suzhou Haider New Material Technology Co., Ltd., where he applies his expertise in material science to develop advanced solutions for shock insulation. His work has garnered attention for its practical applications in various industries.

Collaborations

Yang collaborates with talented individuals such as Jun Yang and Zhifeng Wu, contributing to a dynamic research environment that fosters innovation and development.

Conclusion

Pengcheng Yang's contributions to shock insulation technology exemplify the impact of innovative thinking in material science. His patented inventions are paving the way for advancements in safety and performance in various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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