Peixiong Gao

Title: Peixiong Gao: Innovator in Semiconductor Technology

Introduction

Peixiong Gao is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of semiconductor technology, showcasing his expertise through innovative patents. His work focuses on enhancing semiconductor devices, which are crucial for modern electronic applications.

Latest Patents

Peixiong Gao holds a patent for a semiconductor device and its fabrication method. The patent describes a semiconductor device that includes a substrate with a STI structure, a first polysilicon structure layer, an isolation dielectric layer, and a second polysilicon structure layer. The first polysilicon structure layer is undoped, while the second layer is heavily boron-doped. The invention also features contact hole structures that monitor the target doping concentration of boron during high-concentration boron ion implantation and annealing activation of the second polysilicon structure layer. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Peixiong Gao has established himself as a key figure in the semiconductor industry. His work at Cansemi Technology Inc. has allowed him to apply his knowledge and skills in developing advanced semiconductor solutions. His patent reflects his commitment to innovation and excellence in technology.

Collaborations

Peixiong Gao collaborates with talented professionals in his field, including Junjie Wang and Lei Shao. These collaborations foster a creative environment that drives technological advancements and enhances the development of new semiconductor technologies.

Conclusion

Peixiong Gao is a notable inventor whose contributions to semiconductor technology have made a significant impact. His innovative patent demonstrates his expertise and commitment to advancing the field. His work continues to influence the development of modern electronic devices.