The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Apr. 27, 2025
Cansemi Technology Inc., Guangdong, CN;
CanSemi Technology Inc., Guangzhou, CN;
Abstract
The present disclosure provides a semiconductor device. The semiconductor device include: a substrate having a STI structure; a first polysilicon structure layer, an isolation dielectric layer, and a second polysilicon structure layer sequentially stacked on the STI structure. The first polysilicon structure layer is undoped polysilicon. The second polysilicon structure layer is heavily boron-doped polysilicon. Contact hole structures are provided on the first polysilicon structure layer for monitoring a target doping concentration of boron during high-concentration boron ion implantation and annealing activation of the second polysilicon structure layer. A fabrication method for the semiconductor device is also provided.