Pei-Jan Wang

Title: Pei-Jan Wang: Innovator in Semiconductor Technology

Introduction

Pei-Jan Wang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for improving metal interconnection layers.

Latest Patents

Pei-Jan Wang holds 5 patents that showcase his innovative approaches. His latest patents include a method of forming a TiN/W barrier layer for a hot Al plug. This invention focuses on creating a barrier metal layer that effectively prevents aluminum from diffusing into silicon substrates. The barrier metal layer consists of a stacked structure with a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. This design allows for a high-temperature aluminum interconnection layer that fills a plug, resulting in a structure that is cost-effective and prevents aluminum diffusion. Another notable patent is a method for forming a metal plug, which involves several steps including the formation of a metal contact window, a barrier layer, and a metal layer, followed by chemical mechanical polishing and etching.

Career Highlights

Throughout his career, Pei-Jan Wang has worked with notable companies such as Mosel Vitelic Corporation and Taiwan Semiconductor Manufacturing Company. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Pei-Jan Wang has collaborated with several professionals in his field, including Yeong-Ruey Shiue and Hsien-Liang Meng. Their collective efforts have further advanced the technology in semiconductor applications.

Conclusion

Pei-Jan Wang's innovative work in semiconductor technology, particularly in barrier metal layers and metal plug formation, has made a significant impact on the industry. His contributions continue to influence advancements in semiconductor manufacturing processes.