Munich, Germany

Peggy Menck

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peggy Menck. Retrieved from https://idiyas.com/inventor/peggy-menck

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Peggy Menck - Innovator in Semiconductor Technology

Introduction

Peggy Menck is a notable inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique semiconductor component that incorporates internal heating.

Latest Patents

Peggy Menck holds 1 patent for her invention titled "Semiconductor component with internal heating." This invention involves a process for heating a semiconductor component, as well as the component itself. The design includes a device specifically for heating the semiconductor component, enhancing its functionality and efficiency.

Career Highlights

Peggy is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. Her role at Infineon has allowed her to work on cutting-edge technologies that drive advancements in the industry.

Collaborations

Throughout her career, Peggy has collaborated with esteemed colleagues such as Thomas Huber and Georg Erhard Eggers. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Peggy Menck's contributions to semiconductor technology exemplify her dedication to innovation. Her patent for a semiconductor component with internal heating showcases her ability to address complex challenges in the field. Peggy's work continues to influence the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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