Wolfratshausen, Germany

Paul Werner Von Basse

This inventor holds 3 USPTO granted patents. Top assignee: Siemens Aktiengesellschaft. Active years: 1978-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paul Werner Von Basse. Retrieved from https://idiyas.com/inventor/paul-werner-von-basse-lkupnmry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Wolfratshausen/Farchet, DE (1981)
  • Wolfratshausen, DE (1978 - 2002)

Company Filing History:


Years Active: 1978-2002

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3 patents (USPTO):Explore Patents

Title: Paul Werner Von Basse: Innovator in Memory Technology

Introduction

Paul Werner Von Basse is a notable inventor based in Wolfratshausen, Germany. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on innovative solutions that enhance the performance and efficiency of memory systems.

Latest Patents

One of his latest patents is titled "Memory cell arrangement and process for manufacturing the same." This invention involves a number of memory cell lines that are insulated from one another, each comprising a first doped region and a second doped region. Between these regions lies a gate dielectric that contains materials with charge carrier traps and several gate electrodes. The design allows for the spacing of neighboring gate electrodes to be smaller than the dimensions of the gate electrodes, enabling efficient information storage through the introduction of charge carriers into the gate dielectric. The gate electrodes are preferably manufactured using a spacer technique.

Another significant patent is the "Address buffer for a MOS-memory module." This invention describes an address buffer in MOS technology that features an address memory circuit with an address input driven by a transfer signal. It includes two complementary address outputs and two complementary signal outputs of high signal level. The design incorporates an isolating amplifier with a following-connected output stage, driven by a control clock pulse to supply complementary control signals. The architecture consists of two parallel paths, each made up of driven segments of two transistors, enhancing the overall functionality of the memory module.

Career Highlights

Paul Werner Von Basse is currently associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to push the boundaries of memory technology and contribute to advancements in the field.

Collaborations

Throughout his career, Paul has collaborated with notable colleagues, including Rudiger Hofmann and Franz Hofmann. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Paul Werner Von Basse is a distinguished inventor whose contributions to memory technology have made a lasting impact. His innovative patents and collaborations reflect his commitment to advancing the field and enhancing the capabilities of memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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