Paul McIntryre

Title: Paul McIntryre: Innovator in Semiconductor Technology

Introduction

Paul McIntryre is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of dynamic random access memory devices. His innovative work has led to the filing of a patent that addresses critical aspects of integrated circuit design.

Latest Patents

McIntryre holds a patent for "Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same." This patent describes a dynamic random access memory device that includes storage capacitors utilizing high dielectric constant materials such as BaSrTiO3, SrBi2Ta2O9, and PbZrTiO3. The device features a conductive plug that connects with a semiconductor substrate, along with a buffer layer of titanium silicide that passivates the underlying surface. The design incorporates multiple diffusion barrier layers and electrodes to enhance the performance and reliability of the memory device.

Career Highlights

Paul McIntryre is currently employed at Advanced Technology Materials, Inc. His work at this company has allowed him to focus on advancing semiconductor technologies and improving device performance. His expertise in materials science and engineering has been instrumental in his innovative contributions to the field.

Collaborations

Throughout his career, McIntryre has collaborated with several talented individuals, including Peter S. Kirlin and Scott Robert Summerfelt. These collaborations have fostered a productive environment for innovation and have led to significant advancements in semiconductor technology.

Conclusion

Paul McIntryre's contributions to the field of semiconductor technology exemplify the impact of innovation on modern electronics. His patent work and collaborations highlight his commitment to advancing the industry and improving device performance.