This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2001.
Company Filing History:
1 out of 834,453 Years Active: 2001
Title: Innovations of Paul-Ling Chen in NAND Flash Memory Technology
Introduction
Paul-Ling Chen is an accomplished inventor based in Saratoga, CA (US). He has made significant contributions to the field of NAND flash memory technology. His innovative approach has led to the development of a unique patent that enhances the efficiency and reliability of NAND arrays.
Latest Patents
Paul-Ling Chen holds a patent titled "Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memory." This invention involves a series select transistor and a source select transistor connected in series at the end of a NAND string of floating gate data storage transistors. The design utilizes polysilicon for the floating gates, series select gate, and source select gate. The same tunnel oxide layer serves as gate oxide for both the series select and source select transistors, as well as for the floating gate data storage transistors. This configuration allows for higher voltage tolerance without causing breakdowns, thereby improving the programming process of NAND cells.
Career Highlights
Throughout his career, Paul-Ling Chen has demonstrated a commitment to advancing technology in the semiconductor industry. His innovative designs have contributed to the development of more efficient memory storage solutions. His work has been recognized for its potential to enhance the performance of NAND flash memory devices.
Collaborations
Paul-Ling Chen has collaborated with notable professionals in the field, including Mike Van Buskirk and Shane Charles Hollmer. These partnerships have fostered an environment of innovation and creativity, leading to advancements in memory technology.
Conclusion
Paul-Ling Chen's contributions to NAND flash memory technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a significant advancement that could shape the future of memory storage solutions.