This inventor holds 4 USPTO granted patents. Top assignees: Stc, Inc, Itt Industries, Inc., Standard Telephones & Cables Limited. Active years: 1984-1990.
Company Filing History:
2 out of 233 
1 out of 767 
1 out of 42 Years Active: 1984-1990
Title: Paul J Rosser: Innovator in Semiconductor Technology
Introduction
Paul J Rosser is a notable inventor based in Harlow, GB, recognized for his contributions to semiconductor technology. With a total of 4 patents, Rosser has made significant advancements in processes that enhance the performance and reliability of semiconductor devices.
Latest Patents
One of his latest patents is a process for forming isolation trenches in silicon semiconductor bodies. This innovative method involves selectively doping the silicon substrate and preferentially oxidizing the doped material. The dopant used is typically arsenic or phosphorus, with the substrate being doped to a level of at least 5.times.10.sup.19 cm.sup.-3. Another significant patent is the process of self-aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2. This process prevents the diffusion of silicon from under a titanium disilicide interconnect into an overlying aluminum layer by selectively nitriding the disilicide through annealing in nitrogen.
Career Highlights
Throughout his career, Paul J Rosser has worked with several prominent companies, including STC, Inc. and ITT Industries, Inc. His work in these organizations has contributed to the development of advanced semiconductor technologies.
Collaborations
Rosser has collaborated with notable professionals in the field, including Peter D Scovell and Gary J Tomkins. These collaborations have further enriched his work and innovations in semiconductor technology.
Conclusion
Paul J Rosser's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative processes continue to impact the development of reliable semiconductor devices.