This inventor holds 1 USPTO granted patent. Top assignee: Sandia Corporation. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Paul E Dodd: Innovator in Silicon-on-Insulator Technology
Introduction
Paul E Dodd is a notable inventor based in Tijeras, New Mexico. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon-on-insulator (SOI) field-effect transistors. His work has implications for both commercial and military applications, showcasing his expertise and innovative spirit.
Latest Patents
Dodd holds a patent for a "Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications." This invention describes a silicon-on-insulator (SOI) field-effect transistor (FET) characterized by a source that extends partially through the active layer where the transistor is formed. The design includes a minimal-area body tie contact that connects electrically to the source, which helps reduce floating body effects. This improvement enhances the electrical characteristics of the transistor and increases its radiation hardness for both terrestrial and space applications. The SOI FET also offers better total-dose radiation hardness compared to conventional SOI transistors that lack a specially prepared hardened buried oxide layer. Additionally, complementary n-channel and p-channel SOI FETs can be fabricated to create integrated circuits (ICs) for various applications.
Career Highlights
Paul E Dodd is associated with Sandia Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the field but has also positioned him as a key player in the development of radiation-hardened devices.
Collaborations
Dodd has collaborated with notable colleagues such as Marty R Shaneyfelt and James R Schwank. These partnerships have further enriched his research and development efforts, leading to innovative solutions in the semiconductor industry.
Conclusion
Paul E Dodd's contributions to silicon-on-insulator technology exemplify his commitment to innovation in the field of semiconductors. His patent and collaborations reflect a dedication to enhancing the performance and reliability of electronic devices.