Manchester, United Kingdom

Paul Antony Jerred

This inventor holds 2 USPTO granted patents. Top assignee: Zetex Plc. Active years: 2002-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paul Antony Jerred. Retrieved from https://idiyas.com/inventor/paul-antony-jerred

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 102(Granted Patents)


Company Filing History:


Years Active: 2002-2003

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2 patents (USPTO):Explore Patents

Title: Paul Antony Jerred: Innovator in Semiconductor Technology

Introduction

Paul Antony Jerred is a notable inventor based in Manchester, GB. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device fabrication.

Latest Patents

Jerred's latest patents include a semiconductor device with reduced source diffusion distance and a method of making the same. The semiconductor device features a drain region and a body region that defines an upper surface. Source regions extend from the body region towards the drain region, with a series of indentations that enhance the device's performance. The method of semiconductor device fabrication involves forming indentations in a semiconductor body, partially filling them with a filler material, and introducing dopants to create distinct doped regions within the semiconductor.

Career Highlights

Paul Antony Jerred is currently associated with Zetex Plc, where he applies his expertise in semiconductor technology. His work has contributed to advancements in the efficiency and functionality of semiconductor devices.

Collaborations

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Conclusion

Paul Antony Jerred's innovative work in semiconductor technology continues to influence the industry, demonstrating the importance of creativity and technical skill in advancing modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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