Dundalk, MD, United States of America

Paul A Potyraj

This inventor holds 2 USPTO granted patents. Top assignees: Northrop Grumman Systems Corporation, Westinghouse Electric Corporation. Active years: 1994-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paul A Potyraj. Retrieved from https://idiyas.com/inventor/paul-a-potyraj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 1994-1996

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2 patents (USPTO):Explore Patents

Title: The Innovations of Paul A. Potyraj

Introduction

Paul A. Potyraj is a notable inventor based in Dundalk, MD (US), recognized for his contributions to the field of integrated circuits. He holds 2 patents that showcase his expertise in semiconductor technology. His work has significantly impacted the development of microwave monolithic integrated circuits.

Latest Patents

One of his latest patents is titled "Silicon integrated circuit with passive devices over high resistivity." This invention involves a silicon microwave monolithic integrated circuit device and method of fabricating that utilizes a high resistivity silicon substrate. The design includes a masking layer of low-temperature silicon oxide, silicon nitride, and polysilicon sublayers on a first area, with an epitaxial layer over the surface of the silicon substrate in a second area. Active devices are formed over the second area, while passive devices are created over the first area.

Another significant patent is "Method of making and trimming ballast resistors and barrier metal." This method fabricates microwave power transistor elements onto a semiconductor body. An oxidizable barrier material is applied onto the wafer, serving as a barrier to prevent diffusion between the contact metal of the transistor and the silicon, while also functioning as a ballast resistor. A contact metal layer is deposited onto the barrier material at selected locations, and the excess barrier material is removed. The ballast resistors can then be trimmed by oxidizing a thin surface layer of the exposed barrier material at the ballast resistor locations.

Career Highlights

Throughout his career, Paul A. Potyraj has worked with prominent companies such as Northrop Grumman Systems Corporation and Westinghouse Electric Corporation. His experience in these organizations has contributed to his innovative approach to circuit design and fabrication.

Collaborations

Paul has collaborated with notable coworkers, including James R. Cricchi and Mike L. Salib, who have also made significant contributions to the field of semiconductor technology.

Conclusion

Paul A. Potyraj's work in the field of integrated circuits and his innovative patents demonstrate his valuable contributions to technology. His expertise continues to influence advancements in semiconductor design and fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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