Crawley, United Kingdom

Paul A Burfield


Average Co-Inventor Count = 8.3

ph-index = 5

Forward Citations = 154(Granted Patents)


Location History:

  • Crawley, GB (1993 - 1999)
  • West Sussex, GB (2003)

Company Filing History:


Years Active: 1993-2003

Loading Chart...
5 patents (USPTO):Explore Patents

Title: The Innovations of Paul A Burfield

Introduction

Paul A Burfield, an accomplished inventor based in Crawley, GB, has made significant contributions to the field of ion beam technology. With a portfolio of five patents, Burfield's work showcases cutting-edge innovations that enhance the efficiency and longevity of ion implantation apparatus.

Latest Patents

Among his latest patents, Burfield introduced an innovative ion beam generation apparatus. This apparatus consists of an ion source designed to generate ions and a tetrode extraction assembly with four electrodes that effectively extract and accelerate ions. The unique design features a source electrode aligned with the potential of the ion source, and an extraction electrode closely positioned to facilitate ion extraction. Additionally, it incorporates a variable gap between the extraction and suppression electrodes to optimize ion beam travel.

Another notable patent developed by Burfield focuses on ion implantation apparatus with an improved source lifetime. This innovation modifies existing ion implantation equipment by integrating filament reflectors within the arc chamber and eliminating the need for external electrical insulators. The design reduces the formation of conductive layers on said insulators, significantly extending the equipment's lifespan and reducing downtime. Furthermore, the use of tungsten parts within the arc chamber enhances the purity of the ion beam and improves serviceability.

Career Highlights

Burfield's career is marked by his role at Applied Materials, Inc., where he continues to drive innovation in the field of materials engineering. His dedication to research and development in ion beam technology has led to breakthroughs that are essential for various applications in semiconductor manufacturing and materials processing.

Collaborations

Throughout his career, Burfield has collaborated with talented colleagues such as Bernard F Harrison and Nicholas Bright. Together, they have worked on advancing the field of ion implantation technologies and refining techniques that boost performance and reliability.

Conclusion

Paul A Burfield stands out as a key figure in the realm of ion beam innovations. His patents reflect a commitment to enhancing technology that supports both the semiconductor industry and research fields. With continued developments and collaborations, Burfield is set to leave a lasting impact on the technological landscape.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…