Boulogne, France

Patrick Resneau

This inventor holds 2 USPTO granted patents. Top assignee: Thomson Hybrides Et Microondes. Active years: 1989-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Patrick Resneau. Retrieved from https://idiyas.com/inventor/patrick-resneau

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1989-1990

Loading Chart...
2 patents (USPTO):Explore Patents

Title: The Innovations of Patrick Resneau

Introduction

Patrick Resneau is a notable inventor based in Boulogne, France. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise. His work primarily focuses on enhancing the performance characteristics of field-effect transistors and ultra-high frequency devices.

Latest Patents

Resneau's latest patents include a field-effect semiconductor device comprising an ancillary electrode. This invention features a field-effect transistor that includes an ancillary electrode alongside the traditional source, gate, and drain electrodes. The design allows for improved control over the gain and amplitude of the main transistor, as well as the ability to mix two frequencies addressed on the two gates.

Another significant patent is for an encapsulated low-noise ultra-high frequency semiconductor device. This invention involves a hermetically sealed ultra-high frequency transistor that optimizes performance by reducing the noise factor. The design incorporates a choke mounted between the gate and drain, ensuring that the transistor maintains its impedance and maximum frequency capabilities.

Career Highlights

Patrick Resneau is currently employed at Thomson Hybrides et Microondes, where he continues to develop innovative solutions in semiconductor technology. His work has contributed to advancements in low-noise ultra-high frequency amplifiers, making significant impacts in various applications.

Collaborations

Throughout his career, Resneau has collaborated with notable colleagues such as Daniel Delagebeaudeuf and Henri Derewonko. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Patrick Resneau's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative designs continue to push the boundaries of what is possible in the realm of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…