Koblenz, Germany

Patrick Malkmus

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Patrick Malkmus: Innovator in Refractory Compositions

Introduction

Patrick Malkmus is a notable inventor based in Koblenz, Germany. He has made significant contributions to the field of materials science, particularly in the development of refractory compositions. His innovative work has led to advancements that enhance the performance and durability of these materials.

Latest Patents

Patrick Malkmus holds a patent for "Methods for producing silicon carbide whisker-reinforced refractory composition." This patent outlines methods for forming monolithic refractory compositions that include a specific mixture of alumina, silicon carbide, carbon, Si powder, microsilica, and ferrosilicon. The process involves creating a uniform mixture, installing it, and heat-treating it under controlled conditions to achieve the desired properties. This innovative approach allows for the formation of silicon carbide whiskers within the refractory composition, enhancing its strength and thermal resistance.

Career Highlights

Patrick Malkmus is currently employed at Calderys France, where he continues to develop and refine refractory materials. His expertise in this area has positioned him as a key player in the industry, contributing to the advancement of high-performance materials used in various applications.

Collaborations

Throughout his career, Patrick has collaborated with colleagues such as Jerome Soudier and Jérome Sourdier. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Patrick Malkmus is a distinguished inventor whose work in refractory compositions has made a significant impact in materials science. His patented methods for producing silicon carbide whisker-reinforced compositions demonstrate his commitment to innovation and excellence in his field.

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