Gainesville, FL, United States of America

Patrick Lomenzo


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Innovator Patrick Lomenzo and His Contributions to Ferroelectric Technology

Introduction

Patrick Lomenzo is an innovative inventor based in Gainesville, Florida. He has made significant strides in the field of electronic devices through his unique patent focused on doped ferroelectric hafnium oxide film devices. This invention offers advanced techniques for forming electronic devices that utilize ferroelectric films, demonstrating his commitment to pushing the boundaries of technology.

Latest Patents

Lomenzo holds a patent for "Doped ferroelectric hafnium oxide film devices." This patent describes techniques for creating an electronic device that incorporates a ferroelectric material with one or more crystalline structures. The crystalline structures primarily include hafnium, oxygen, and various dopants, strategically distributed to form distinct layers within the ferroelectric material. Notably, the invention allows for the second layer to be sandwiched between the first and third layers, contributing to an orthorhombic phase in the crystalline structure.

Career Highlights

Lomenzo's professional journey is marked by his affiliation with the University of Florida Research Foundation, Incorporated. His role at this esteemed institution highlights his dedication to research and innovation, positioning him as a critical player in the field of materials science and electronic engineering.

Collaborations

During his career, Patrick Lomenzo has collaborated with esteemed colleagues such as Toshikazu Nishida and Mohammad Takmeel. These partnerships reflect a strong network of professionals committed to advancing technology and exploring new methodologies in electronic device fabrication.

Conclusion

In conclusion, Patrick Lomenzo stands out as a notable inventor in the realm of ferroelectric technology. His patent on doped ferroelectric hafnium oxide film devices marks a significant contribution to the field, showcasing his ability to innovate and collaborate within a robust academic environment. As the technology landscape continues to evolve, Lomenzo's work will likely play a crucial role in shaping the future of electronic devices.

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