The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2018

Filed:

Oct. 06, 2016
Applicant:

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Toshikazu Nishida, Gainesville, FL (US);

Mohammad Takmeel, Gainesville, FL (US);

Saeed Moghaddam, Gainesville, FL (US);

Patrick Lomenzo, Gainesville, FL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); G11C 11/22 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); G11C 11/22 (2013.01); G11C 11/221 (2013.01); H01L 21/022 (2013.01); H01L 21/02148 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/02321 (2013.01); H01L 21/02356 (2013.01); H01L 21/28291 (2013.01); H01L 28/40 (2013.01); H01L 29/42364 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 28/56 (2013.01);
Abstract

Techniques for forming an electronic device having a ferroelectric film are described. The electronic device comprises a ferroelectric material having one or more crystalline structures. The one or more crystalline structures may comprise hafnium, oxygen, and one or more dopants. The one or more dopants are distributed in the ferroelectric material to form a first layer, a second layer, and a third layer. The second layer is positioned between the first layer and the third layer. Distribution of one or more dopants within the first layer, the second layer, and the third layer may promote a crystalline structure to have an orthorhombic phase.


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