Company Filing History:
Years Active: 2005-2011
Title: Innovations of Patrick J Jones
Introduction
Patrick J Jones is a notable inventor based in Allen, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of Schottky diodes. With a total of 3 patents to his name, his work has had a considerable impact on the industry.
Latest Patents
One of his latest patents is a method of manufacturing a dual metal Schottky diode. This invention includes a semiconductor substrate, a first metal, a barrier layer, and a second metal. The method involves providing a semiconductor substrate, forming a barrier layer over the substrate, and creating a first metal layer. It also includes annealing the substrate to form areas of reacted and un-reacted first metal, followed by the removal of selected areas of the un-reacted first metal. Additionally, a second metal layer is formed over the substrate, which is then annealed to create areas of reacted and un-reacted second metal.
Career Highlights
Patrick J Jones is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
Some of his coworkers include Richard B Irwin and Tony Thanh Phan, who have collaborated with him on various projects.
Conclusion
Patrick J Jones is a distinguished inventor whose contributions to semiconductor technology are noteworthy. His innovative methods for manufacturing Schottky diodes demonstrate his expertise and commitment to advancing the field.