The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Mar. 30, 2005
Richard B. Irwin, Richardson, TX (US);
Tony T. Phan, Flower Mound, TX (US);
Hong-ryong Kim, Plano, TX (US);
Ming-yeh Chuang, McKinney, TX (US);
Jennifer S. Dumin, Wylie, TX (US);
Patrick J. Jones, Allen, TX (US);
Fredric D. Bailey, Irving, TX (US);
Richard B. Irwin, Richardson, TX (US);
Tony T. Phan, Flower Mound, TX (US);
Hong-Ryong Kim, Plano, TX (US);
Ming-Yeh Chuang, McKinney, TX (US);
Jennifer S. Dumin, Wylie, TX (US);
Patrick J. Jones, Allen, TX (US);
Fredric D. Bailey, Irving, TX (US);
Texas Instruments Incoprorated, Dallas, TX (US);
Abstract
An embodiment of the invention is a Schottky diodehaving a semiconductor substrate, a first metal, a barrier layer, and second metal. Another embodiment of the invention is a method of manufacturing a Schottky diodethat includes providing a semiconductor substrate, forming a barrier layerover the semiconductor substrate, forming a first metal layerover the semiconductor substrate, annealing the semiconductor substrateto form areasof reacted first metal and areasof un-reacted first metal, and removing selected areasof the un-reacted first metal. The method further includes forming a second metal layerover the semiconductor substrateand annealing the semiconductor substrateto form areasof reacted second metal and areasof un-reacted second metal.