Patrick Flynn

Title: The Innovations of Patrick Flynn

Introduction

Patrick Flynn is an accomplished inventor based in Morris Plains, NJ (US). He has made significant contributions to the field of materials science, particularly in the development of advanced growth systems for silicon carbide (SiC) crystals. With a total of 3 patents to his name, Flynn's work has the potential to impact various industries, including electronics and semiconductor manufacturing.

Latest Patents

One of Flynn's latest patents is the SiC single crystal sublimation growth apparatus. This innovative physical vapor transport growth system features a growth chamber that is charged with SiC source material and a SiC seed crystal in spaced relation. An envelope, which is at least partially gas-permeable, is disposed in the growth chamber, separating it into a source compartment containing the SiC source material and a crystallization compartment housing the SiC seed crystal. The envelope is made from a material that reacts to vapor generated during the sublimation growth of a SiC single crystal, producing C-bearing vapor that serves as an additional carbon source during the growth process.

Career Highlights

Throughout his career, Patrick Flynn has worked with notable companies such as II-VI Delaware, Inc. and II-VI Incorporated. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge research and development in the field of crystal growth technologies.

Collaborations

Flynn has collaborated with talented individuals in his field, including Avinash K Gupta and Ilya Zwieback. These partnerships have fostered innovation and have been instrumental in advancing their shared goals in materials science.

Conclusion

Patrick Flynn's contributions to the field of materials science, particularly through his patented innovations, highlight his role as a significant inventor. His work continues to pave the way for advancements in silicon carbide crystal growth technologies.