Ii-Vi Delaware, Inc.

Ii-Vi Incorporated

Honeywell International Inc.

Patrick Flynn

Morris G Anderson

Grant A Gordon

Ilya Zwieback

Avinash K Gupta

Yates Wong

Edward Semenas

Richard Bonvouloir

Marcus Getkin

James B Cox

Allen Brown

A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

SiC single crystal sublimation growth apparatus

SiC single crystal sublimation growth method and apparatus

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Morris Plains, NJ, United States of America

Patrick Flynn