Patrick Del Vecchio

Title: Patrick Del Vecchio and His Work on Quantum Heterostructures.

Introduction

Patrick Del Vecchio is an inventor associated with the Corporation de l’École Polytechnique de Montréal. His patent work concerns quantum heterostructures designed to be compatible with silicon-based processing and technologies. The supplied information identifies 1 patent associated with him.

Latest Patents

The provided patent is titled “Quantum Heterostructures, Related Devices and Methods for Manufacturing the Same.” It describes a quantum heterostructure built from coextending germanium-tin (GeSn) buffer layers, each with a different tin content. A quantum well extends over the buffer-layer stack and includes a highly tensile-strained layer containing at least one group IV element, with strain of at least 1%.

The patent also describes a manufacturing method that adjusts reactor temperature and varies the molar fraction of a tin-based precursor to form the GeSn buffer layers on a substrate. The quantum well is then formed over the stack. The disclosed approach aims to support compatibility with silicon-based manufacturing processes.

Career Highlights

The available information connects Del Vecchio’s patent activity with the Corporation de l’École Polytechnique de Montréal. His identified invention focuses on semiconductor materials and fabrication methods for quantum heterostructures.

Collaborations

The supplied information names Oussama Moutanabbir and Simone Assali as Del Vecchio’s coworkers.

Conclusion

Patrick Del Vecchio’s identified patent addresses GeSn buffer layers, a strained quantum well, and a manufacturing approach intended for silicon-compatible technologies.