Company Filing History:
Years Active: 2014
Title: The Innovative Contributions of Patrick A. Kearney
Introduction
Patrick A. Kearney is a notable inventor based in Wynantskill, NY (US). He has made significant contributions to the field of extreme ultra-violet lithography (EUVL) through his innovative patent. His work has implications for the fabrication of process structures, which are essential in various technological applications.
Latest Patents
Kearney holds a patent for the EUVL process structure fabrication methods. This patent outlines methods for fabricating a process structure, such as a mask or mask blank. The methods include providing a silicon substrate, forming a multi-layer EUVL structure over the silicon substrate, reducing the thickness of the silicon substrate, and attaching a low-thermal-expansion material (LTEM) substrate to the multi-layer EUVL structure or the reduced silicon substrate. The multi-layer EUVL structure may consist of multiple bi-layers of different materials, along with a capping layer and an optional absorber layer, which is patternable to facilitate the formation of a EUVL mask.
Career Highlights
Throughout his career, Patrick A. Kearney has worked with prominent companies in the technology sector. He has been associated with Sematech, Inc. and Intel Corporation, where he contributed to advancements in semiconductor technology. His experience in these organizations has helped shape his expertise in lithography and fabrication methods.
Collaborations
Kearney has collaborated with notable professionals in his field, including Vibhu Jindal and Frank Goodwin. These collaborations have likely enriched his work and contributed to the development of innovative solutions in the industry.
Conclusion
Patrick A. Kearney's contributions to the field of extreme ultra-violet lithography through his patent and career experiences highlight his role as an influential inventor. His work continues to impact the technology landscape, showcasing the importance of innovation in advancing fabrication methods.