Company Filing History:
2 out of 26 Years Active: 1994
Title: Biography of Patrice Arsene-Henry
Introduction
Patrice Arsene-Henry is a notable inventor based in Massy, France. He has made significant contributions to the field of semiconductor technology, particularly in the design and manufacturing of transistors.
Latest Patents
Patrice holds a patent for a "Method for the manufacture of a transistor having differentiated access." This innovative method involves the creation of source and drain access regions in a field-effect transistor, utilizing a three-layer mask of metal, resin, and metal to define the control region. The process allows for the implantation of the source access region while protecting the drain access region, leading to enhanced transistor performance.
Career Highlights
Patrice has worked at Thomson-Csf Semiconducteurs Spécifiques, where he has applied his expertise in semiconductor manufacturing. His work has been instrumental in advancing the technology used in modern electronic devices.
Collaborations
Throughout his career, Patrice has collaborated with esteemed colleagues such as Thierry Pacou and Tung N Pham. These partnerships have fostered innovation and contributed to the success of various projects in the semiconductor industry.
Conclusion
Patrice Arsene-Henry's contributions to the field of semiconductor technology and his innovative patent demonstrate his commitment to advancing electronic engineering. His work continues to influence the development of efficient and effective transistor designs.