The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Jan. 13, 1993
Applicant:
Inventors:
Thierry Pacou, Les Ulis, FR;
Patrice Arsene-Henry, Massy, FR;
Tung N Pham, Paris, FR;
Yann Genuist, Massy, FR;
Assignees:
Thomson-CSF Semiconducteurs Specifiques, Puteaux, FR;
Thomson-CSF Semiconducteurs Specifiques, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437147 ; 437184 ; 437912 ;
Abstract
The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.