Grenoble, France

Pascal Reynier

This inventor holds 1 USPTO granted patent. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2026.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Pascal Reynier: Innovator in Radio Frequency Technology

Introduction

Pascal Reynier is a notable inventor based in Grenoble, France. He has made significant contributions to the field of radio frequency technology, particularly through his innovative patent. His work focuses on creating efficient and compact solutions for radio frequency transmission.

Latest Patents

Pascal Reynier holds a patent for a "Radio frequency transmission front-end module and associated manufacturing method." This invention involves an integration system and method for the manufacture of radio frequency transmission front-end modules. It incorporates radio frequency integrated circuits and self-biased magnetic components integrated on a 'Wafer Level Packaging'-type technology. This integration allows for the design of efficient, compact, and low-cost front-end modules.

Career Highlights

Reynier is associated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, a prominent research institution in France. His work there has been pivotal in advancing radio frequency technologies. He has demonstrated a commitment to innovation and excellence in his field.

Collaborations

Pascal Reynier has collaborated with talented individuals such as Ayssar Serhan and Alexandre Giry. These partnerships have contributed to the success of his projects and the advancement of technology in their shared field.

Conclusion

Pascal Reynier is a distinguished inventor whose work in radio frequency technology has led to significant advancements. His innovative patent and collaborations highlight his contributions to the industry. His efforts continue to pave the way for future developments in this critical area of technology.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…