Berlin, Germany

Panajotis Margaris

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1977.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Panajotis Margaris. Retrieved from https://idiyas.com/inventor/panajotis-margaris

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1977

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1 patent (USPTO):Explore Patents

Title: Panajotis Margaris and High-Voltage Measurement Technology.

Introduction

Panajotis Margaris is an inventor associated with Berlin, Germany, and Siemens Aktiengesellschaft. His recorded patent concerns a high-voltage measuring capacitor and a method of detecting and compensating for capacitance changes caused by external influences.

Latest Patents

Margaris is credited with 1 patent: “Arrangement Comprising a High Voltage Measuring Capacitor.” The invention places an auxiliary capacitor next to a high-voltage measuring capacitor. An evaluation device detects changes in the auxiliary capacitor’s capacitance, while an indicating device can signal those changes. A control or regulating device can also compensate for corresponding changes in the measuring capacitor, helping maintain reliable measurement.

Career Highlights

The patent reflects work on measurement and monitoring in high-voltage switchgear, including fully insulated, metal-encapsulated installations. Margaris’s recorded association with Siemens Aktiengesellschaft connects his invention to the company’s work in electrical engineering.

Collaborations

Reinhold Schmitt and Hans-Joachim Freygang are identified as Margaris’s coworkers.

Conclusion

Panajotis Margaris’s recorded contribution is a Siemens-associated patent that uses an auxiliary capacitor to detect and address external influences on high-voltage measurement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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