Location History:
- Agoura, CA (US) (1991)
- Westlake, CA (US) (1991)
- Agoura Hills, CA (US) (1992)
Company Filing History:
Years Active: 1991-1992
Title: Innovations of Owen K Wu
Introduction
Owen K Wu is a notable inventor based in Agoura, CA (US). He has made significant contributions to the field of molecular beam epitaxy, particularly in improving the efficiency of materials like mercury (Hg) on substrates. With a total of 3 patents, his work has garnered attention in the scientific community.
Latest Patents
One of his latest patents is the "Plasma/radiation assisted molecular beam epitaxy method." This innovative method and apparatus achieve a significantly improved sticking coefficient for materials such as Hg upon a substrate, leading to higher efficiency. The process involves forming a highly ionized, low-pressure plasma that consists of a mixture of ions, neutral particles, and electrons. This plasma is directed onto a substrate alongside a flux of another substance in the compound, which can be in the form of vapor or a second plasma. The method also describes radiation-assisted epitaxial growth for Hg compounds, utilizing ionization and excitation radiation formed from Hg vapor to assist in the growth process. The plasma is generated in a specialized discharge chamber featuring a hollow cathode with an emissive-mix-free cathode insert, ensuring that the source does not contaminate the plasma. Remarkably, the Hg sticking coefficients have been improved by a factor of 40 or more.
Career Highlights
Owen K Wu has been associated with Hughes Aircraft Company, where he has applied his expertise in molecular beam epitaxy. His innovative approaches have contributed to advancements in the field, particularly in the efficiency of material growth processes.
Collaborations
Throughout his career, Owen has collaborated with notable colleagues, including Julius Hyman, Jr. and John Robert Beattie. These collaborations have further enriched his work and contributed to the development of innovative technologies.
Conclusion
Owen K Wu's contributions to molecular beam epitaxy and his innovative methods have significantly impacted the efficiency of material growth processes. His work continues to inspire advancements in the field, showcasing the importance of innovation in technology.
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