The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 1991
Filed:
Jun. 15, 1989
G Sanjiv Kamath, Malibu, CA (US);
Owen K Wu, Westlake, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
P-type doping of a molecular beam epitaxy (MBE) grown substrate composed of a Group II-VI combination is accomplished by forming a flux from a Group II-V combination, and applying the flux to the substrate at a pressure less than about 10.sup.-6 atmosphere. The Group II material is selected from Zn, Cd, Hg and Mg, the Group V material from As, Sb and P, and the Group VI material from S, Se and Te. The Group II-V dopant combination is preferably provided as a compound formed predominantly from the Group II material, and having the formulation X.sub.3 Y.sub.2, where X is the Group II material and Y is the Group V material. The doping concentration is controlled by controlling the temperature of the Group II-V combination. Metal vacancies in the lattice structure are tied up by the Group II constituent of the dopant combination, leaving the Group V dopant available to enter the Group VI sublattice and produce a p-type doping.