Oussama Moutanabbir

Title: Oussama Moutanabbir: Inventor in Silicon-Compatible Quantum Heterostructures.

Introduction

Oussama Moutanabbir is an inventor based in Montréal, Canada, and is associated with Corporation de l’École Polytechnique de Montréal. His work includes a patented approach to quantum heterostructures designed to be compatible with silicon-based processing and technologies.

Latest Patents

Moutanabbir is named on 1 patent: “Quantum Heterostructures, Related Devices and Methods for Manufacturing the Same.” The invention describes a quantum heterostructure built from coextending germanium-tin (GeSn) buffer layers, each with a different tin content, and a quantum well extending over the stack. The well includes a highly tensile-strained layer containing at least one Group IV element, with strain of at least 1%.

The disclosed manufacturing method adjusts reactor temperature and varies the molar fraction of an tin-based precursor to form GeSn buffer layers with different compositions on a substrate. It then forms the quantum well over the buffer-layer stack. The design aims to support quantum devices using silicon-compatible manufacturing processes.

Career Highlights

The patent reflects Moutanabbir’s contribution to semiconductor materials and device engineering, particularly the development and fabrication of strained quantum structures. Its focus on GeSn layers and silicon-compatible processing connects advanced heterostructure design with established semiconductor manufacturing technologies.

Collaborations

Moutanabbir’s listed coworkers include Simone Assali and Anis Attiaoui. His patent is associated with Corporation de l’École Polytechnique de Montréal.

Conclusion

Oussama Moutanabbir’s patented work advances silicon-compatible quantum heterostructures through engineered GeSn buffer layers and a highly strained quantum well.