Tokyo, Japan

Osamu Morimiya


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1978

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1 patent (USPTO):Explore Patents

Title: Inventor Spotlight: Osamu Morimiya

Introduction

Osamu Morimiya, an innovative inventor based in Tokyo, Japan, has made significant contributions in the field of ion implantation technology. With a unique patent to his name, he has demonstrated his expertise and commitment to advancing scientific knowledge.

Latest Patents

Morimiya holds a patent for a "Method and apparatus for implanting radioactive gas in a base material." This patent outlines a process that involves conducting radioactive gas from a reservoir to an ion source for ionization. The method accelerates the ionized radioactive gas into a high-energy form and implants the high-energy radioactive ion beam in a foil made of materials such as stainless steel, aluminum, or copper within an ion implantation unit.

Career Highlights

He is currently employed at Tokyo Shibaura Electric Co., Ltd., where he continues to push the boundaries of technological development. His work involves innovative applications of ion implantation, reflecting the company's dedication to advancing electronic technologies.

Collaborations

Throughout his career, Morimiya has collaborated with notable colleagues such as Mititaka Terasawa and Katsuhiko Mawatari. Together, they have contributed to research and development initiatives, enhancing the technological capabilities of their projects.

Conclusion

Osamu Morimiya stands out as a skilled inventor whose work in ion implantation has the potential to impact various industries. His dedication to innovation and collaboration within his field marks him as a significant figure in the realm of modern technology.

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